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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IRFR430APBF

IRFR430APBF - SMD N channel transistors

IRFR430APBF
Description

Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 3.2A
Pulsed drain current 20A
Power dissipation 110W
Case DPAK
TO252
Gate-source voltage ±30V
On-state resistance 1.7Ω
Mounting SMD
Gate charge 24nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat