IRFR1N60APBF - SMD N channel transistors

IRFR1N60APBF
Description

Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 0.89A
Pulsed drain current 5.6A
Power dissipation 36W
Case DPAK
TO252
Gate-source voltage ±30V
On-state resistance
Mounting SMD
Gate charge 14nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat