IRFR110PBF - SMD N channel transistors

IRFR110PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 2.7A
Pulsed drain current 17A
Power dissipation 25W
Case DPAK
TO252
Gate-source voltage ±20V
On-state resistance 0.54Ω
Mounting SMD
Gate charge 8.3nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat