IRFPE50PBF - THT N channel transistors

IRFPE50PBF
Description

Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 4.9A
Power dissipation 190W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting THT
Gate charge 200nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat