IRFPC50APBF - THT N channel transistors

IRFPC50APBF
Description

Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 11A
Pulsed drain current 44A
Power dissipation 180W
Case TO247AC
Gate-source voltage ±30V
On-state resistance 0.58Ω
Mounting THT
Gate charge 70nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat