IRFP90N20DPBF - THT N channel transistors

IRFP90N20DPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 94A
Power dissipation 580W
Case TO247AC
Gate-source voltage ±30V
On-state resistance 23mΩ
Mounting THT
Gate charge 180nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat