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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFP4768PBFXKMA1

IRFP4768PBFXKMA1 - THT N channel transistors

IRFP4768PBFXKMA1
Description

Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 250V
Drain current 66A
Pulsed drain current 370A
Power dissipation 520W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 17.5mΩ
Mounting THT
Gate charge 180nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat