IRFP4668PBFXKMA1 - THT N channel transistors

IRFP4668PBFXKMA1
Description

Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 130A
Power dissipation 520W
Case TO247AC
Gate-source voltage ±30V
On-state resistance 9.7mΩ
Mounting THT
Gate charge 161nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat