IRFP4468PBF - THT N channel transistors

IRFP4468PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 290A
Power dissipation 520W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 2.6mΩ
Mounting THT
Gate charge 360nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat