IRFP4137PBF - THT N channel transistors

IRFP4137PBF
Description

Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 300V
Drain current 38A
Power dissipation 341W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 56mΩ
Mounting THT
Gate charge 83nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat