IRFP250PBF - THT N channel transistors

IRFP250PBF
Description

Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 19A
Power dissipation 190W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 0.85Ω
Mounting THT
Gate charge 0.14µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat