IRFP048RPBF - THT N channel transistors

IRFP048RPBF
Description

Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 70A
Pulsed drain current 290A
Power dissipation 190W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 18mΩ
Mounting THT
Gate charge 110nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat