IRFL210TRPBF - SMD N channel transistors

IRFL210TRPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.6A
Pulsed drain current 7.7A
Power dissipation 3.1W
Case SOT223
Gate-source voltage ±20V
On-state resistance 1.5Ω
Mounting SMD
Gate charge 8.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat