IRFL110TRPBF - SMD N channel transistors

IRFL110TRPBF
Description

Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 0.96A
Pulsed drain current 12A
Power dissipation 3.1W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.54Ω
Mounting SMD
Gate charge 8.3nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat