IRFIB6N60APBF - THT N channel transistors

IRFIB6N60APBF
Description

Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 3.5A
Power dissipation 60W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 0.75Ω
Mounting THT
Gate charge 49nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat