IRFI830GPBF - THT N channel transistors

IRFI830GPBF
Description

Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 2A
Power dissipation 35W
Case TO220FP
Gate-source voltage ±20V
On-state resistance 1.5Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat