IRFD9220PBF - THT P channel transistors

IRFD9220PBF
Description

Transistor: P-MOSFET; unipolar; -200V; -0.36A; 1W; DIP4

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -0.36A
Power dissipation 1W
Case DIP4
Gate-source voltage ±20V
On-state resistance 1.5Ω
Mounting THT
Gate charge 15nC
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat