IRFD9210PBF - THT P channel transistors

IRFD9210PBF
Description

Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -0.25A
Power dissipation 1W
Case DIP4
Gate-source voltage ±20V
On-state resistance
Mounting THT
Gate charge 8.9nC
Kind of channel enhancement
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Development and design: Seventh Cat