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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFBG20PBF

IRFBG20PBF - THT N channel transistors

IRFBG20PBF
Description

Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 1.4A
Pulsed drain current 5.6A
Power dissipation 54W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 11Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat