IRFBF30 - THT N channel transistors

IRFBF30
Description

Transistor: N-MOSFET; unipolar; 900V; 2.3A; 125W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 900V
Drain current 2.3A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 3.7Ω
Mounting THT
Gate charge 78nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat