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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IRFBF20SPBF

IRFBF20SPBF - SMD N channel transistors

IRFBF20SPBF
Description

Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 900V
Drain current 1.1A
Pulsed drain current 6.8A
Power dissipation 54W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 8Ω
Mounting SMD
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat