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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IRFBE30SPBF

IRFBE30SPBF - SMD N channel transistors

IRFBE30SPBF
Description

Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 2.6A
Pulsed drain current 16A
Power dissipation 125W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 3Ω
Mounting SMD
Gate charge 78nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat