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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFBE20PBF

IRFBE20PBF - THT N channel transistors

IRFBE20PBF
Description

Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 7.2A; 54W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 1.8A
Pulsed drain current 7.2A
Power dissipation 54W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 6.5Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat