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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFBC40APBF

IRFBC40APBF - THT N channel transistors

IRFBC40APBF
Description

Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 125W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 3.9A
Pulsed drain current 25A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 1.2Ω
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat