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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFBC20PBF

IRFBC20PBF - THT N channel transistors

IRFBC20PBF
Description

Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 1.4A
Pulsed drain current 8A
Power dissipation 50W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 4.4Ω
Mounting THT
Gate charge 18nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat