IRFB4332PBF - THT N channel transistors

IRFB4332PBF
Description

Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 250V
Drain current 60A
Power dissipation 390W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 33mΩ
Mounting THT
Gate charge 99nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat