IRFB4321PBF - THT N channel transistors

IRFB4321PBF
Description

Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 150V
Drain current 83A
Power dissipation 330W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 15mΩ
Mounting THT
Gate charge 71nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat