IRFB4127PBF - THT N channel transistors

IRFB4127PBF
Description

Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 76A
Power dissipation 375W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 20mΩ
Mounting THT
Gate charge 0.1µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat