IRFB4020PBF - THT N channel transistors

IRFB4020PBF
Description

Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 18A
Power dissipation 100W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.1Ω
Mounting THT
Gate charge 18nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat