IRFB3307ZPBF - THT N channel transistors

IRFB3307ZPBF
Description

Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 75V
Drain current 120A
Power dissipation 230W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 5.8mΩ
Mounting THT
Gate charge 79nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat