IRFB3207PBF - THT N channel transistors

IRFB3207PBF
Description

Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 75V
Drain current 120A
Power dissipation 330W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 4.5mΩ
Mounting THT
Gate charge 180nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat