IRF9Z24NPBF - THT P channel transistors

IRF9Z24NPBF
Description

Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage -55V
Drain current -12A
Power dissipation 45W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.175Ω
Mounting THT
Gate charge 12.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat