IRF9530PBF - THT P channel transistors

IRF9530PBF
Description

Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -8.2A
Pulsed drain current -48A
Power dissipation 88W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.3Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat