IRF9510SPBF - SMD P channel transistors

IRF9510SPBF
Description

Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -4A
Pulsed drain current -16A
Power dissipation 43W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting SMD
Gate charge 8.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat