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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF830PBF

IRF830PBF - THT N channel transistors

IRF830PBF
Description

Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 2.9A
Pulsed drain current 18A
Power dissipation 74W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 1.5Ω
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat