IRF830APBF - THT N channel transistors

IRF830APBF
Description

Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 5A
Pulsed drain current 20A
Power dissipation 74W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 1.4Ω
Mounting THT
Gate charge 24nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat