IRF820APBF - THT N channel transistors

IRF820APBF
Description

Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 2.5A
Pulsed drain current 10A
Power dissipation 50W
Case TO220AB
Gate-source voltage ±30V
On-state resistance
Mounting THT
Gate charge 17nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat