IRF740PBF - THT N channel transistors

IRF740PBF
Description

Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 400V
Drain current 6.3A
Pulsed drain current 40A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.55Ω
Mounting THT
Gate charge 63nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat