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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF710PBF

IRF710PBF - THT N channel transistors

IRF710PBF
Description

Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 400V
Drain current 1.2A
Pulsed drain current 6A
Power dissipation 36W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 3.6Ω
Mounting THT
Gate charge 17nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat