IRF644SPBF - SMD N channel transistors

IRF644SPBF
Description

Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 8.5A
Pulsed drain current 56A
Power dissipation 125W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 0.28Ω
Mounting SMD
Gate charge 68nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat