IRF640NPBF - THT N channel transistors

IRF640NPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 18A
Power dissipation 150W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting THT
Gate charge 44.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat