IRF634PBF - THT N channel transistors

IRF634PBF
Description

Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 5.1A
Pulsed drain current 32A
Power dissipation 74W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.45Ω
Mounting THT
Gate charge 41nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat