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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF630NPBF

IRF630NPBF - THT N channel transistors

IRF630NPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 9.5A
Power dissipation 82W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.3Ω
Mounting THT
Gate charge 23.3nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat