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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF630

IRF630 - THT N channel transistors

IRF630
Description

Transistor: N-MOSFET; MESH OVERLAY™ II; unipolar; 200V; 5.7A; 75W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology MESH OVERLAY™ II
Polarisation unipolar
Drain-source voltage 200V
Drain current 5.7A
Power dissipation 75W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 0.4Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat