IRF620PBF - THT N channel transistors

IRF620PBF
Description

Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 5.2A
Pulsed drain current 18A
Power dissipation 50W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.8Ω
Mounting THT
Gate charge 14nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat