IRF530SPBF - SMD N channel transistors

IRF530SPBF
Description

Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 10A
Pulsed drain current 56A
Power dissipation 88W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 0.16Ω
Mounting SMD
Gate charge 26nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat