IRF530NPBF - THT N channel transistors

IRF530NPBF
Description

Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 17A
Power dissipation 79W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 90mΩ
Mounting THT
Gate charge 24.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat