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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF510PBF

IRF510PBF - THT N channel transistors

IRF510PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 4A
Pulsed drain current 20A
Power dissipation 43W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.54Ω
Mounting THT
Gate charge 8.3nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat