IRF3808STRLPBF - SMD N channel transistors

IRF3808STRLPBF
Description

Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 75V
Drain current 75A
Pulsed drain current 550A
Power dissipation 200W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat