IRF3710ZPBF - THT N channel transistors

IRF3710ZPBF
Description

Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 59A
Power dissipation 160W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 18mΩ
Mounting THT
Gate charge 82nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat